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2SK655 - Silicon N-Channel MOSFET

Download the 2SK655 datasheet PDF. This datasheet also covers the 2SK0655 variant, as both devices belong to the same silicon n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • 0.75 max. 4.0±0.2 (0.8) 3.0±0.2 2.0±0.2 I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDS VGSO ID IDP PD Tch Tstg Ratings 50 8 100 200 200 150.
  • 55 to +150 Unit V V mA mA mW °C °C 0.45+0.20.
  • 0.10 (2.5) (2.5) 0.45+0.20.
  • 0.10 0.7±0.1 15.6±0.5 G High-speed switching G Allowing to supply with the radial taping (0.8).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SK0655_PanasonicSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2SK655
Manufacturer Panasonic
File Size 76.37 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet 2SK655 Datasheet

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Other Datasheets by Panasonic

Part Number Description
2SK65 Silicon N-Channel Junction FET
2SK656 Silicon N-Channel MOSFET
2SK657 Silicon N-Channel MOSFET
2SK601 N-Channel MOSFET
2SK614 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silicon MOS FETs (Small Signal) 2SK0655 (2SK655) Silicon N-Channel MOS FET unit: mm For switching I Features 0.75 max. 4.0±0.2 (0.8) 3.0±0.2 2.0±0.2 I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDS VGSO ID IDP PD Tch Tstg Ratings 50 8 100 200 200 150 −55 to +150 Unit V V mA mA mW °C °C 0.45+0.20 –0.10 (2.5) (2.5) 0.45+0.20 –0.10 0.7±0.1 15.6±0.5 G High-speed switching G Allowing to supply with the radial taping (0.8) 7.