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B1253 - 2SB1253

Key Features

  • q Optimum for 40W HiFi output q High foward current transfer ratio hFE: 5000 to 30000 q Low collector to emitter saturation voltage VCE(sat): <.
  • 2.5V q Full-pack package which can be installed to the heat sink with one screw 21.0±0.5 15.0±0.3 11.0±0.2 φ3.2±0.1 5.0±0.2 3.2 2.0±0.2 2.0±0.1 Solder Dip 16.2±0.5 s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit 1.1±0.1 5.45±0.3 10.9±0.5 0.6±0.2 Collector to base voltage Collector to emitter voltage Emitter to.

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Part Number Description
B1254 2SB1254

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Power Transistors 2SB1253 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1893 Unit: mm 12.5 3.5 15.0±0.2 0.7 s Features q Optimum for 40W HiFi output q High foward current transfer ratio hFE: 5000 to 30000 q Low collector to emitter saturation voltage VCE(sat): < –2.5V q Full-pack package which can be installed to the heat sink with one screw 21.0±0.5 15.0±0.3 11.0±0.2 φ3.2±0.1 5.0±0.2 3.2 2.0±0.2 2.0±0.1 Solder Dip 16.2±0.5 s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit 1.1±0.1 5.45±0.3 10.9±0.5 0.6±0.