D1272
Key Features
- 5±0.2
- 7±0.3 φ3.1±0.1
- 0±0.5 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC IB PC Tj Tstg
- 4±0.1
- 3±0.2 Solder Dip
- 8±0.1
- 5 +0.2 -0.1
- 54±0.25 5.08±0.5 1 2 3 1:Base 2:Collector 3:Emitter TO-220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency (TC=25˚C) Symbol ICBO IEBO VCEO hFE* VCE(sat) fT Conditions VCB = 200V, IE = 0 VEB = 6V, IC = 0 IC = 25mA, IB = 0 VCE = 4V, IC = 0.2A IC = 0.5A, IB = 0.02A VCE = 4V, IC = 0.1A, f = 10MHz 25 150 500 2000 1 V MHz min typ max 100 100 Unit µA µA V
- h FE Rank classification Q P Rank hFE 500 to 1200 800 to 2000 1 Power Transistors PC - Ta 50 0.5 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) TC=25˚C IB=400µA 350µA 300µA 0.3 250µA 200µA 0.2 150µA 100µA 0.1 50µA 0 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 12 2SD1272 IC - VCE Collector to emitter saturation voltage VCE(sat) (V) 10 VCE(sat) - IC IC/IB=25 Collector power dissipation PC (W) Collector current IC (A) 40 (1)
- 4 3 TC=100˚C 30 1
