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D1275A - 2SD1275A

Key Features

  • 1±0.1 4.2±0.2 Solder Dip (4.0) 14.0±0.5.
  • Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SD1275 2SD1275A VCEO VEBO IC ICP TC = 25°C PC Tj Tstg Symbol VCBO Rating 60 80 60 80 5 2 4 35 2.0 150.
  • 55 to +150 °C °C V A A W V Unit V 1.4±0.1 1.3±0.2 0.5+0.2.
  • 0.1 0.8±0.1 2.54±0.3 5.08±0.5 Collector-emitter voltage 2SD1275 (Base open) 2SD1275A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dis.

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Full PDF Text Transcription (Reference)

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Power Transistors 2SD1275, 2SD1275A Silicon NPN triple diffusion planar type darlington For power amplification Complementary to 2SB0949 and 2SB0949A • High forward current transfer ratio hFE • High-speed switching • Full-pack package which can be installed to the heat sink with one screw 16.7±0.3 0.7±0.1 www.DataSheet4U.com Unit: mm 10.0±0.2 5.5±0.2 4.2±0.2 2.7±0.2 7.5±0.2 ■ Features φ 3.1±0.1 4.2±0.2 Solder Dip (4.0) 14.0±0.5 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SD1275 2SD1275A VCEO VEBO IC ICP TC = 25°C PC Tj Tstg Symbol VCBO Rating 60 80 60 80 5 2 4 35 2.0 150 −55 to +150 °C °C V A A W V Unit V 1.4±0.1 1.3±0.2 0.5+0.2 –0.1 0.8±0.1 2.54±0.3 5.08±0.