0.05
+0.1
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation.
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Transistors
2SD1994A
Silicon NPN epitaxial planer type
Unit: mm
For low-frequency power amplification and driver amplification Complementary to 2SB1322A I Features
• Low collector to emitter saturation voltage VCE(sat) • Output of 2 W to 3 W is obtained with a complementary pair with 2SB1322A • Allowing supply with the radial taping
6.9±0.1
1.05 2.5±0.1 ±0.05
(1.45) 0.8
0.15
0.7
4.0
0.65 max.
1.0 1.0
0.2
0.45−0.05
+0.1
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation * Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Rating 60 50 5 1.5 1 1 150 −55 to +150
Unit V V V A A W °C °C
1.2±0.1 0.65 max.
0.1 0.45+ − 0.
D1994A Datasheet
