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D2276 - 2SD2276

Datasheet Summary

Features

  • q Optimum for 110W HiFi output q High foward current transfer ratio hFE: 5000 to 30000 q Low collector to emitter saturation voltage VCE(sat):.

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Datasheet Details

Part number D2276
Manufacturer Panasonic Semiconductor
File Size 55.20 KB
Description 2SD2276
Datasheet download datasheet D2276 Datasheet
Additional preview pages of the D2276 datasheet.

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Full PDF Text Transcription

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Power Transistors 2SD2276 Silicon NPN triple diffusion planar type Darlington 2.0 4.0 2.0 3.0 For power amplification Complementary to 2SB1503 s Features q Optimum for 110W HiFi output q High foward current transfer ratio hFE: 5000 to 30000 q Low collector to emitter saturation voltage VCE(sat): <2.5V 26.0±0.5 10.0 6.0 20.0±0.5 Unit: mm φ 3.3±0.2 5.0±0.3 3.0 1.5 1.5 s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C VCBO VCEO VEBO ICP IC PC 160 140 5 15 8 120 3.5 Junction temperature Storage temperature Tj 150 Tstg –55 to +150 Unit V V V A A W ˚C ˚C 20.0±0.5 2.5 Solder Dip 2.0±0.3 3.0±0.3 1.
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