The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Power Transistors
2SD2276
Silicon NPN triple diffusion planar type Darlington
2.0 4.0 2.0 3.0
For power amplification Complementary to 2SB1503
s Features
q Optimum for 110W HiFi output q High foward current transfer ratio hFE: 5000 to 30000 q Low collector to emitter saturation voltage VCE(sat): <2.5V
26.0±0.5
10.0 6.0
20.0±0.5
Unit: mm
φ 3.3±0.2 5.0±0.3
3.0
1.5
1.5
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO VCEO VEBO ICP IC
PC
160 140
5 15 8 120 3.5
Junction temperature Storage temperature
Tj 150 Tstg –55 to +150
Unit V V V A A
W
˚C ˚C
20.0±0.5 2.5
Solder Dip
2.0±0.3 3.0±0.3
1.
D2276 Datasheet
