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Power F-MOS FETs
2SK3047
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed: EAS > 15mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 25ns q No secondary breakdown
unit: mm
9.9±0.3 4.6±0.2 2.9±0.2
s Applications
q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply
15.0±0.5
φ3.2±0.1
13.7±0.2 4.2±0.2
1.4±0.2 1.6±0.2 0.8±0.1
3.0±0.5
2.6±0.1
0.55±0.15
s Absolute Maximum Ratings (TC = 25°C)
Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 800 ±30 ±2 ±4 15 30 2 150 −55 to +150 Unit V V A A mJ W °C °C
1 2
2.54±0.3 3 5.08±0.
K3047 Datasheet
