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LN77L - GaAlAs Infrared Light Emitting Diode

Key Features

  • High-power output, high-efficiency : PO = 18 mW (typ. ) Fast response and high-speed modulation capability : fC = 20 MHz (typ. ) Wide directivity : θ = 20 deg. (typ. ) Transparent epoxy resin package 1.0 7.65±0.2 ø5.0±0.2 25.6±1.0 5.05±0.3 1.5 (2.0) 2-0.8 max. 2-0.6±0.15 2.54 0.6±0.15 1 2 1: Anode 2: Cathode Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature.
  • Symbol PD IF IFP.
  • VR Topr Tstg Rat.

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Datasheet Details

Part number LN77L
Manufacturer Panasonic
File Size 40.74 KB
Description GaAlAs Infrared Light Emitting Diode
Datasheet download datasheet LN77L Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Infrared Light Emitting Diodes LN77L GaAlAs Infrared Light Emitting Diode Unit : mm For optical control systems Features High-power output, high-efficiency : PO = 18 mW (typ.) Fast response and high-speed modulation capability : fC = 20 MHz (typ.) Wide directivity : θ = 20 deg. (typ.) Transparent epoxy resin package 1.0 7.65±0.2 ø5.0±0.2 25.6±1.0 5.05±0.3 1.5 (2.0) 2-0.8 max. 2-0.6±0.15 2.54 0.6±0.15 1 2 1: Anode 2: Cathode Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * Symbol PD IF IFP* VR Topr Tstg Ratings 190 100 1 3 –25 to +85 –30 to +100 Unit mW mA A V ˚C ˚C tw = 10 µs, Duty cycle = 0.