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Infrared Light Emitting Diodes
LN78
GaAlAs Infrared Light Emitting Diode
Unit : mm
For optical control cystems
ø2.4
2.9±0.25 4.5±0.3
3.9±0.3
Features
High-power output, high-efficiency : PO = 10 mW (typ.) High-speed modulation capability : fC = 12 MHz
12.8 min.
2.8
2.4
2-1.2±0.3
Not soldered
1.2 0.9
1.7±0.2 0.8
1.5
2-0.45±0.15 1 2.54 R1.2 2
0.45±0.15
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature
*
R0.6
Symbol PD IF IFP
*
Ratings 180 100 1 3 –25 to+85 –30 to +100
Unit mW mA A V ˚C ˚C
1: Cathode 2: Anode
VR Topr Tstg
f = 100 Hz, Duty cycle = 0.
LN78 Datasheet
