• Part: LNC702PS
  • Description: GaAlAs Semiconductor Laser
  • Manufacturer: Panasonic
  • Size: 40.25 KB
Download LNC702PS Datasheet PDF
Panasonic
LNC702PS
LNC702PS is GaAlAs Semiconductor Laser manufactured by Panasonic.
Features LD 1 Junction plane 1.0±0.1 Reference plane Reference slot 3 2.3±0.2 1.27±0.07 0.25 Applications Optical data processing devices Laser beam printers 1.2±0.1 Reference plane 3-ø0.45 6.5±0.5 2 1 ø2.0 Bottom view 3 1: LD Anode 2: mon Case 3: PD Cathode Absolute Maximum Ratings (Ta = 25˚C) Parameter Radiant power Reverse voltage Power dissipation Operating ambient temperature Storage temperature Laser PIN Symbol PO VR VR (PIN) Pd (PIN) Topr Tstg Ratings 5 2 30 60 - 10 to +60 - 40 to +85 Unit m W V V m W ˚C ˚C Electro-Optical Characteristics (Ta = 25˚C) Parameter Threshold current Operating current Operating voltage Oscillation wavelength Radiation angle Horizontal direction Vertical direction Symbol Ith IOP VOP λL- 2 θ//- 1 θ⊥- 1 IP IR θX θY CW Conditions CW PO = 5m W CW PO = 5m W CW PO = 5m W CW PO = 5m W CW PO = 5m W CW PO = 5m W, VR (PIN) = 5V VR (PIN) = 15V CW PO = 5m W CW PO = 5m W min 15 20 780 8 20 0.3 - 2.0 - 3.0 typ 25 35 1.9 795 12 33 0.8 max 40 50 2.5 810 15 45 1.6 0.1 +2.0 +3.0 Unit m A m A V nm deg. deg. m A µA deg. deg. PIN photo current Reverse current (DC) Optical axis accuracy - 1 The - 2 Sampling X direction Y direction radiation angle is indicated as half full angle. inspections are to be performed. On each wafer, n = 10 samplings are to be performed, with an evaluation criterion of zero rejects. Semiconductor Laser - IOP 6 200 Ta = 25˚C 5 I- V Far field pattern PO (m W) I (m A) Relative radiant...