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LNC707PS - High Power Output Semiconductor Laser

Datasheet Summary

Features

  • 1.2±0.1 2.3±0.2 1.27 0.25 ø2.0 Bottom view 1: LD Anode 2: Common Case 3: PD Cathode Absolute Maximum Ratings (Ta = 25˚C) Parameter Radiant power Reverse voltage Power dissipation Operating ambient temperature Storage temperature Laser PIN Symbol PO VR VR (PIN) Pd (PIN) Topr Tstg Ratings 60 2 30 100.
  • 10 to +60.
  • 40 to +80 Unit mW V V mW ˚C ˚C Electro-Optical Characteristics (Ta = 25˚C) Parameter Threshold current Operating current Operating voltage Oscillation wavelength Rad.

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Datasheet Details

Part number LNC707PS
Manufacturer Panasonic Semiconductor
File Size 41.49 KB
Description High Power Output Semiconductor Laser
Datasheet download datasheet LNC707PS Datasheet
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Semiconductor Laser LNC707PS High Power Output Semiconductor Laser Overview The LNC707PS is a near infrared GaAlAs laser diode which provides continuous oscillation in single mode and is stable at low operating current. LNC707PS uses a small package, and is capable of operating continuously at high temperatures with high output (60 mW). It can be used in a wide range of applications as a light source for optical disk memory and optical information devices. In particular, it can be used in making equipment portable due to its low current operations. ø1.0 min. ø5.6 +0 –0.025 ø4.3±0.1 ø3.55±0.1 Unit : mm 2 0.4±0.1 110˚±1˚ LD 1 Junction plane 1.0±0.1 Reference plane Reference slot Kovar glass LD pellet Reference plane ø1.2max. 3-ø0.
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