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MA21D38 - Silicon epitaxial planar type

Key Features

  • r>.
  • IF(AV) = 1 A rectification is possible.
  • Low forward voltag VF.
  • High non-repetitive peak forward surge voltage  1 1.90±0.10 2.50±0.10 0.30±0.10 Parameter Reverse voltage Maximum peak reverse voltage Forward current (Average) Non-repetitive peak forward surge current.
  • Junction temperature Storage time Symbol VR VRM IF(AV) IFSM Tj Tstg Rating 30 30 1.0 20 125.
  • 55 to +125 Unit V V 0.80±0.10 5° 0 to 0.1 A A °C °C 1: Anode 2: Cathode SMini2-F2 Package.

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Datasheet Details

Part number MA21D38
Manufacturer Panasonic
File Size 318.12 KB
Description Silicon epitaxial planar type
Datasheet download datasheet MA21D38 Datasheet

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www.DataSheet4U.com Schottky Barrier Diodes (SBD) MA21D38 Silicon epitaxial planar type For high frequency rectification 1.25±0.10 0.60±0.10 Unit: mm 0.58+0.02 –0.03 ■ Features  IF(AV) = 1 A rectification is possible  Low forward voltag VF  High non-repetitive peak forward surge voltage  1 1.90±0.10 2.50±0.10 0.30±0.10 Parameter Reverse voltage Maximum peak reverse voltage Forward current (Average) Non-repetitive peak forward surge current * Junction temperature Storage time Symbol VR VRM IF(AV) IFSM Tj Tstg Rating 30 30 1.0 20 125 –55 to +125 Unit V V 0.80±0.10 5° 0 to 0.