High non-repetitive peak forward surge voltage
1
1.90±0.10
2.50±0.10
0.30±0.10
Parameter Reverse voltage Maximum peak reverse voltage Forward current (Average) Non-repetitive peak forward surge current.
Junction temperature Storage time
Symbol VR VRM IF(AV) IFSM Tj Tstg
Rating 30 30 1.0 20 125.
55 to +125
Unit V V
0.80±0.10 5°
0 to 0.1
A A °C °C
1: Anode 2: Cathode
SMini2-F2 Package.
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Schottky Barrier Diodes (SBD)
MA21D38
Silicon epitaxial planar type
For high frequency rectification
1.25±0.10 0.60±0.10
Unit: mm
0.58+0.02 –0.03
■ Features
IF(AV) = 1 A rectification is possible Low forward voltag VF High non-repetitive peak forward surge voltage
1
1.90±0.10
2.50±0.10
0.30±0.10
Parameter Reverse voltage Maximum peak reverse voltage Forward current (Average) Non-repetitive peak forward surge current * Junction temperature Storage time
Symbol VR VRM IF(AV) IFSM Tj Tstg
Rating 30 30 1.0 20 125 –55 to +125
Unit V V
0.80±0.10 5°
0 to 0.