Less voltage dependence of diode capacitance CD
3
2.
Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage Forward current Operating ambient temperature Storage temperature Symbol VR IF Topr Tstg Rating 35 100.
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Band Switching Diodes
MA26077
Silicon epitaxial planar type
For band switching Features
0.60±0.05
Unit: mm
Low forward dynamic resistance rf Less voltage dependence of diode capacitance CD
3
2
Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage Forward current Operating ambient temperature Storage temperature Symbol VR IF Topr Tstg Rating 35 100 –25 ∼ +85 –55 to +125 Unit V mA °C °C
1 1.00±0.05
0.39+0.01 −0.03 0.15±0.05 0.05±0.03 0.35±0.01
0.25±0.05 0.50±0.05
0.25±0.05 1
3
0.65±0.01
2 0.05±0.03
1: Anode 2: N.C. 3: Cathode
ML3-N2 Package
Marking Symbol: 3L Electrical Characteristics Ta = 25°C±3°C
Parameter Forward voltage Reverse current Diode capacitance Forward dynamic resistance *
Note) 1. 2. 3. 4.
MA26077 Datasheet
