High breakdown voltage: VR = 80 V
0.01±0.005 0.60±0.05
Unit: mm
2
1
1.00±0.05
0.39+0.01.
0.03 0.05±0.03 0.05±0.03.
Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage Maximum peak reverse voltage Forward current Peak forward current Non-repetitive peak forward surge current.
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Switching Diodes
MA26111
Silicon epitaxial planar type
For switching circuits Features
Allowing high-density mounting Short reverse recovery time trr Small terminal capacitance Ct High breakdown voltage: VR = 80 V
0.01±0.005 0.60±0.05
Unit: mm
2
1
1.00±0.05
0.39+0.01 −0.03 0.05±0.03 0.05±0.03
Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage Maximum peak reverse voltage Forward current Peak forward current Non-repetitive peak forward surge current * Junction temperature Storage temperature
Note) * : t = 1 s
Symbol VR VRM IF IFM IFSM Tj Tstg
Rating 80 80 100 225 500 125 –55 to +125
Unit V V mA mA mA °C °C
1: Anode 2: Cathode
0.50±0.05 2
0.25±0.05
0.25±0.05
1 0.65±0.
MA26111 Datasheet
