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Variable Capacitance Diodes
MA26376
Silicon epitaxial planar type
Unit: mm
For UHF wireless telegraphic VCO
0.60±0.05
■ Features
• Good linearity and large capacitance-ratio in CD − VR relation • Small series resistance rD
3
2
1 1.00±0.05
0.39+0.01 −0.03
0.15±0.05 0.05±0.03 0.35±0.01
0.25±0.05
0.50±0.05
■ Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage Junction temperature Storage temperature Symbol VR Tj Tstg Rating 6 125 −55 to +125 Unit V °C °C
0.25±0.05 1
3
0.65±0.01
2 0.05±0.03
1: Anode 2: N.C.