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MA739 - Silicon epitaxial planar type

Key Features

  • 2 1 0.25.
  • 0.05 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current.
  • 1 Symbol VR VRRM IF(AV) IFSM Tj Tstg Rating 90 90 0.7 10.
  • 40 to +125.
  • 40 to +125 Unit V V A A °C °C 1.2 ± 0.4 5.0.
  • 0.1 + 0.4 1.2 ± 0.4 Non-repetitive peak forward surge current.
  • 2 Junction temperature Storage temperature 1 : Anode 2 : Cathode New Mini-Power Type Package (2-pin) Marking Symbol: PE Note).
  • 1.

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Datasheet Details

Part number MA739
Manufacturer Panasonic
File Size 89.94 KB
Description Silicon epitaxial planar type
Datasheet download datasheet MA739 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Schottky Barrier Diodes (SBD) MA2Q739 (MA739) Silicon epitaxial planar type Unit : mm For high-frequency rectification 4.4 ± 0.3 0 to 0.05 • Forward current (average) IF(AV): 0.7 A type • Reverse voltage (DC value) VR: 90 V • Allowing automatic insertion with the emboss taping 2.5 ± 0.3 I Features 2 1 0.25 − 0.05 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current*1 Symbol VR VRRM IF(AV) IFSM Tj Tstg Rating 90 90 0.7 10 −40 to +125 −40 to +125 Unit V V A A °C °C 1.2 ± 0.4 5.0 − 0.1 + 0.4 1.2 ± 0.