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(IPD)
MIP2E4DMY
MOS
I
2.8±0.2 1.5±0.2
Unit : mm
10.5±0.5 9.5±0.2 8.0±0.2
6.7±0.3
• •
4.5±0.2 1.4±0.1
I
15.4±0.3
φ 3.7±0.2
I
Ta = 25°C ± 3°C
13.5±0.5 4.2±0.3 Solder Dip
1.4±0.1
(9.3)
2.5±0.2 0.6 +0.1 –0.2
0.8±0.1
VD VC ID IDP IC Tch Tstg
700 10 1.72 2.4 0.1 150 −55 ∼ +150
V V A A A °C °C
2.54±0.3 5.08±0.5
1 2 3
1 : Control 2 : Source 3 : Drain TO-220-A1 Package
: MIP2E4DMY
I
Control 1 3
Drain
S R
Q Q MOSFET
Max Duty Clock Sawtooth
S V-I R
Q Q
2
Source
: 2001
8
SLB00030BJD
2.8±0.2
•
1
www.DataSheet4U.com MIP2E4DMY
I
TC = 25°C ± 2°C
fOSC MAXDC PWM
* *
VC = VC(CNT) − 0.2 V VC = VC(CNT) − 0.2 V
90 66
100 69 11 60
110 72
kHz % dB mA/µs
GPWM m VC < VC(ON) VC = VC(CNT) − 0.
MIP2E4DMY Datasheet
