Datasheet Details
| Part number | MIP2E3DMY |
|---|---|
| Manufacturer | Panasonic |
| File Size | 172.57 KB |
| Description | Silicon MOSFET |
| Datasheet | MIP2E3DMY_Panasonic.pdf |
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Overview: (IPD) MIP2E3DMY MOS I 2.8±0.2 1.5±0.2 Unit : mm 10.5±0.5 9.5±0.2 8.0±0.2 6.7±0.3 • • 4.5±0.2 1.4±0.1 I 15.4±0.3 φ 3.7±0.2 I Ta = 25°C ± 3°C 13.5±0.5 4.2±0.3 Solder Dip 1.4±0.1 (9.3) 2.5±0.2 0.6 +0.
| Part number | MIP2E3DMY |
|---|---|
| Manufacturer | Panasonic |
| File Size | 172.57 KB |
| Description | Silicon MOSFET |
| Datasheet | MIP2E3DMY_Panasonic.pdf |
|
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
MIP2E3D | High-Performance IPD for Battery Chaegers | Matsushita |
| Part Number | Description |
|---|---|
| MIP2E3DMS | Silicon MOS-type integrated circuit |
| MIP2E3DMU | Silicon MOSFET |
| MIP2E1DMC | IPD |
| MIP2E1DMS | Silicon MOS-type integrated circuit |
| MIP2E1DMTSCF | Silicon MOSFET |
| MIP2E1DMU | Silicon MOS-type integrated circuit |
| MIP2E2DMU | IPD |
| MIP2E2DMY | Silicon MOSFET |
| MIP2E5DMY | Silicon MOS type integrated circuit |
| MIP2E7DMY | Silicon MOSFET |