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MIP2E9DMY - Silicon MOSFET

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MIP2E9DMY MOS (IPD) ■ • • ■ • ■ Ta = 25°C ± 3°C VD 700 VC 10 ID 5.2 IDP 7.2 IC 0.1 Tch 150 Tstg −55 ∼ +150 V V A A A °C °C ■ • TO-220-A2 • 1: Control 2: Source 3: Drain ■ : MIP2E9DMY ■ Control 1 Max Duty Clock Sawtooth SQ RQ SQ V-I R Q : 2010 3 SLB00071BJD 3 Drain MOSFET 2 Source 1 MIP2E9DMY ■ TC = 25°C ± 3°C PWM / ) *: * * fOSC MAXDC GPWM m VC = VC(CNT) − 0.2 V VC = VC(CNT) − 0.2 V IC(SB) IC(OP) VC(ON) VC(OFF) ∆VC TSW / TTIM fTIM IC(CHG) VC(CNT) * ∆VC(CNT) VD(MIN) VC < VC(ON) VC = VC(CNT) − 0.2 V S1 = OPEN S1 = OPEN S1 = OPEN S1 = OPEN S1 = OPEN VC = 0 V VC = 5 V * * * * ILIMIT ton(BLK) td(OCL) TOTP VC reset S2 = OPEN RDS(ON) ID = 0.3 A IDSS VDS = 650 V, VC = 6.5 V VDSS ID = 0.25 mA, VC = 6.
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