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MIP2E7DMY - Silicon MOSFET

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MIP2E7DMY MOS (IPD) ■ • • ■ • ■ Ta = 25°C ± 3°C VD 700 V VC 10 V ID 3.5 A IDP 4.9 A IC 0.1 A Tch 150 °C Tstg −55 ∼ +150 °C ■ • TO-220-A2 • 1: Control 2: Source 3: Drain ■ : MIP2E7DMY ■ Control 1 Max Duty Clock Sawtooth SQ RQ SQ V-I R Q : 2010 3 SLB00032CJD 3 Drain MOSFET 2 Source 1 MIP2E7DMY ■ TC = 25°C ± 2°C PWM / ) *: * * fOSC MAXDC GPWM m VC = VC(CNT) − 0.2 V VC = VC(CNT) − 0.2 V IC(SB) IC(OP) VC(ON) VC(OFF) ∆VC TSW / TTIM fTIM IC(CHG) VC(CNT) * ∆VC(CNT) VD(MIN) VC < VC(ON) VC = VC(CNT) − 0.2 V VC = 0 V VC = 5 V * * * * * * ILIMIT ton(BLK) td(OCL) TOTP VC reset RDS(ON) IDSS VDSS tr tf Rth(ch-c) Rth(ch-a) ID = 0.3 A VDS = 650 V, VC = 6.5 V ID = 0.25 mA, VC = 6.5 V 90 100 110 kHz 66 69 72 % 11 dB 120 mA/µs 0.05 0.30 0.6 0.7 1.8 2.7 5.1 6.0 6.6 4.1 5.0 5.