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MIP301 - Silicon MOS IC

Features

  • q 100V high breakdown voltage MOS FET and CMOS control circuits are integrated into one chip q 5V and 3 - 5W output with 24VDC input (Flyback method) unit: mm 0.6±0.3 0.4±0.25 1 2 3 4 8 5.0±0.3 1.5±0.2 4.2±0.3 6.5±0.3 7 6 5 s.

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Intelligent Power Devices (IPDs) MIP301 Silicon MOS IC s Features q 100V high breakdown voltage MOS FET and CMOS control circuits are integrated into one chip q 5V and 3 - 5W output with 24VDC input (Flyback method) unit: mm 0.6±0.3 0.4±0.25 1 2 3 4 8 5.0±0.3 1.5±0.2 4.2±0.3 6.5±0.3 7 6 5 s Applications 1.27 0.1±0.1 0.3 q IPD for DC/DC converter s Absolute Maximum Ratings (Ta = 25 ± 3°C) Parameter Drain voltage Control voltage Input voltage Output current Control current Channel temperature Storage temperature Symbol VD VC VIN ID IC Tch Tstg Ratings 90 8 30 1.1 0.
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