Datasheet Summary
Intelligent Power Devices (IPDs)
Silicon MOS IC s Features q 100V high breakdown voltage MOS FET and CMOS control circuits are integrated into one chip q 5V and 3
- 5W output with 24VDC input (Flyback method) unit: mm
0.6±0.3 0.4±0.25 1 2 3 4
8 5.0±0.3 1.5±0.2 4.2±0.3 6.5±0.3 7 6 5 s Applications
1.27 0.1±0.1 0.3 q IPD for DC/DC converter s...