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Intelligent Power Devices (IPDs)
MIP501, MIP502
MIP501 , MIP502
Silicon MOS IC
s Features
q
MIP501
3.8±0.2 10.8±0.2
7.5±0.2
4.5±0.2
Unit : mm
High breakdown voltage, N-Ch MOS FET output (V DSS > 40V Ron < 0.5 Ω) Over-current-protection function built-in Reset function built-in
16.0±1.0
90° 0.65±0.1 0.85±0.1
q q q
2.5±0.1
1.0±0.1 0.65±0.1 0.7±0.1
0.8C
0.8C
Direct drive possible by the logic circuit
s Applications
q
Lamp drive
2.5±0.2 0.8C
0.5±0.1 2.5±0.2
0.4±0.1 2.05±0.2
s Absolute Maximum Ratings (Ta= 25˚C)
Parameter Output breakdown voltage Output peak current Output current Input voltage Input current Allowable power dissipation Junction temperature Storage temperature Operating temperature MIP501 MIP502 Symbol VDSS IOP IOA VIN IIN PD Tj Tstg Topr Rating 40 5 1.7 – 0.