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MIP501 - Silicon MOS IC

General Description

No.1 pin : GND pin.

Connect to the GND pin.

(Source) No.2 pin : Output pin.

Key Features

  • q MIP501 3.8±0.2 10.8±0.2 7.5±0.2 4.5±0.2 Unit : mm High breakdown voltage, N-Ch MOS FET output (V DSS > 40V Ron < 0.5 Ω) Over-current-protection function built-in Reset function built-in 16.0±1.0 90° 0.65±0.1 0.85±0.1 q q q 2.5±0.1 1.0±0.1 0.65±0.1 0.7±0.1 0.8C 0.8C Direct drive possible by the logic circuit s.

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Full PDF Text Transcription (Reference)

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Intelligent Power Devices (IPDs) MIP501, MIP502 MIP501 , MIP502 Silicon MOS IC s Features q MIP501 3.8±0.2 10.8±0.2 7.5±0.2 4.5±0.2 Unit : mm High breakdown voltage, N-Ch MOS FET output (V DSS > 40V Ron < 0.5 Ω) Over-current-protection function built-in Reset function built-in 16.0±1.0 90° 0.65±0.1 0.85±0.1 q q q 2.5±0.1 1.0±0.1 0.65±0.1 0.7±0.1 0.8C 0.8C Direct drive possible by the logic circuit s Applications q Lamp drive 2.5±0.2 0.8C 0.5±0.1 2.5±0.2 0.4±0.1 2.05±0.2 s Absolute Maximum Ratings (Ta= 25˚C) Parameter Output breakdown voltage Output peak current Output current Input voltage Input current Allowable power dissipation Junction temperature Storage temperature Operating temperature MIP501 MIP502 Symbol VDSS IOP IOA VIN IIN PD Tj Tstg Topr Rating 40 5 1.7 – 0.