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MIP805 - Silicon MOS IC

Key Features

  • q Output MOSFET with high breakdown voltage for voltage step-up, EL driver and CMOS control circuits are integrated into one chip. q Oscillation circuit is incorporated q EL voltage controlled push-pull drive system achieves higher EL light intensity. (160Vp-p) 10.
  • 0.25±0.1 unit: mm 1 10 3.0±0.2 2 to 12˚ q EL drive 8.
  • 0.5±0.07 s.

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Intelligent Power Devices (IPDs) MIP805 Silicon MOS IC s Features q Output MOSFET with high breakdown voltage for voltage step-up, EL driver and CMOS control circuits are integrated into one chip. q Oscillation circuit is incorporated q EL voltage controlled push-pull drive system achieves higher EL light intensity. (160Vp-p) 10–0.25±0.1 unit: mm 1 10 3.0±0.2 2 to 12˚ q EL drive 8–0.5±0.07 s Applications s Absolute Maximum Ratings (Ta = 25°C) Parameter Power supply voltage Input voltage (ENB) Output voltage (CIL) Output voltage (DC) Output voltage (EL) Output voltage (EL) Output current (CIL) Output current (EL) Output current (EL) Allowable power dissipation Operating ambient temperature Operating Junction temperature Storage temperature −−−− −−−− 5 6 0.625±0.1 6.3±0.2 4.3±0.