Datasheet4U Logo Datasheet4U.com

PNZ123S - Silicon NPN Phototransistor

Key Features

  • High sensitivity Low dark current Fast response : tr = 3.5 µs (typ. ) Small size (ø 3) ceramic package ø0.3±0.05 ø0.45±0.05 0.9±0.15 Absolute Maximum Ratings (Ta = 25˚C) Parameter Collector to emitter voltage Emitter to collector voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO VECO IC PC Topr Tstg Ratings 20 5 10 50.
  • 25 to +85.
  • 30 to +100 Unit V V mA mW ˚C ˚C 2 1 1: Emitter 2: Collector Electro-Optical Chara.

📥 Download Datasheet

Datasheet Details

Part number PNZ123S
Manufacturer Panasonic
File Size 43.29 KB
Description Silicon NPN Phototransistor
Datasheet download datasheet PNZ123S Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Phototransistors PNZ123S Silicon NPN Phototransistor Unit : mm For optical control systems 4.1±0.3 2.0±0.2 12.5 min. ø3.0±0.2 Can be combined with LN62S to form an photo interrupter Features High sensitivity Low dark current Fast response : tr = 3.5 µs (typ.) Small size (ø 3) ceramic package ø0.3±0.05 ø0.45±0.05 0.9±0.