PU7457 - Silicon N-Channel Power F-MOS FET (with built-in zener diode)

Datasheet Summary

Features

q High avalanche energy capacity q High electrostatic breakdown voltage q No secondary breakdown q High breakdown voltage, large allowable power dissipation q Allowing Low-voltage drive 25.3±0.2 1.65±0.2 9.5±0.2 8.0 unit: mm 4.0±0.2 s.

Panasonic Semiconductor

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Datasheet Details

Part number	PU7457
Manufacturer	Panasonic Semiconductor
File Size	47.94 KB
Description	Silicon N-Channel Power F-MOS FET (with built-in zener diode)
Datasheet	PU7457 Datasheet
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Power Transistor Arrays (F-MOS FETs) PU7457 Silicon N-Channel Power F-MOS FET (with built-in zener diode) s Features q High avalanche energy capacity q High electrostatic breakdown voltage q No secondary breakdown q High breakdown voltage, large allowable power dissipation q Allowing Low-voltage drive 25.3±0.2 1.65±0.2 9.5±0.2 8.0 unit: mm 4.0±0.2 s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 4.4±0.5 0.5±0.15 1.0±0.25 2.54±0.2 9!2.54=22.86±0.25 0.8±0.25 0.5±0.15 C1.5±0.

Published: Apr 16, 2005 |