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UN216 - Silicon PNP epitaxial planer transistor

Datasheet Summary

Features

  • q q q q Small and lightweight Low power consumption (low VCE(sat) transistor used) Low-voltage drive With 6 elements incorporated. (SO.
  • 14) 1 6.5±0.3 14-0.4±0.1 Unit: mm 5.5±0.3 14 1.5±0.1 0.8 s.

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Datasheet Details

Part number UN216
Manufacturer Panasonic Semiconductor
File Size 46.58 KB
Description Silicon PNP epitaxial planer transistor
Datasheet download datasheet UN216 Datasheet
Additional preview pages of the UN216 datasheet.

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Full PDF Text Transcription

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Small Signal Transistor Arrays UN216 Transistor array to drive the small motor s Features q q q q Small and lightweight Low power consumption (low VCE(sat) transistor used) Low-voltage drive With 6 elements incorporated. (SO–14) 1 6.5±0.3 14-0.4±0.1 Unit: mm 5.5±0.3 14 1.5±0.1 0.8 s Applications q q q q 0 to 0.1 0.5 7.7±0.3 6˚ s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT* Tj Tstg (Ta=25±2˚C) Ratings ±12 ±10 ±7 ±3 0.5 150 –55 to +150 Unit V V V A W ˚C ˚C 1 2 3 4 5 6 7 14 13 12 11 10 9 8 +0.1 45˚ 0.5±0.2 0.2 –0.
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