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UNR32AT - NPN Transistor

Datasheet Summary

Features

  • s.
  • Suitable for high-density mounting and downsizing of the equipment.
  • Contribute to low power consumption 0.23+0.05.
  • 0.02 0.33+0.05.
  • 0.02 3 0.15 min. 0.80±0.05 1.20±0.05 0.10+0.05.
  • 0.02 Unit: mm (0.40) (0.40) 0.80±0.05 1.20±0.05 5° Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg Rating 50 50 80 100.

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Datasheet Details

Part number UNR32AT
Manufacturer Panasonic Semiconductor
File Size 268.03 KB
Description NPN Transistor
Datasheet download datasheet UNR32AT Datasheet
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www.DataSheet4U.net Transistors with built-in Resistor UNR32AT Silicon NPN epitaxial planar type For digital circuits  Features  Suitable for high-density mounting and downsizing of the equipment  Contribute to low power consumption 0.23+0.05 –0.02 0.33+0.05 –0.02 3 0.15 min. 0.80±0.05 1.20±0.05 0.10+0.05 –0.02 Unit: mm (0.40) (0.40) 0.80±0.05 1.20±0.05 5° Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg Rating 50 50 80 100 125 –55 to +125 Unit V V mA mW °C °C 0.15 min.  Absolute Maximum Ratings Ta = 25°C 1 2 0 to 0.01 0.52±0.
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