UP04314 - Silicon NPN epitaxial planar type Transistor
Panasonic
Key Features
ion date: December 2003
SJJ00240BED
1
UP04314.
Electrical Characteristics Ta = 25°C ± 3°C.
Tr1
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Output voltage high-level Output voltage low-level Input resistance Resistance ratio Transition fre.
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Composite Transistors
UP04314
Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2)
For switching/digital circuits
6 (0.30) 5 4
1.20±0.05 1.60±0.05
0.20+0.05 –0.02
Unit: mm
0.10±0.02
■ Basic Part Number
• UNR2214 + UNR2114
Display at No.1 lead
0.55±0.05
■ Absolute Maximum Ratings Ta = 25°C
Parameter Tr1 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Tr2 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Overall Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC VCBO VCEO IC PT Tj Tstg Rating 50 50 100 −50 −50 −100 125 125 −55 to +125 Unit V V mA V V mA mW °C °C
1: Emitter (Tr1) 2: Base (Tr1) 3: Collector (Tr2)
0 to 0.