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UP04315 - Silicon NPN Transistor

Key Features

  • n date: June 2003 SJJ00268BED 1 UP04315.
  • Electrical Characteristics (continued) Ta = 25°C ± 3°C.
  • Tr2 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Output voltage high level Output voltage low level Input resistance Transition frequency Symb.

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Datasheet Details

Part number UP04315
Manufacturer Panasonic
File Size 106.51 KB
Description Silicon NPN Transistor
Datasheet download datasheet UP04315 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Composite Transistors UP04315 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For switching/digital circuits 6 (0.30) 5 4 0.20+0.05 –0.02 Unit: mm 0.10±0.02 1.20±0.05 ■ Absolute Maximum Ratings Ta = 25°C Parameter Tr1 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Tr2 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Overall Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC VCBO VCEO IC PT Tj Tstg Rating 50 50 100 −50 −50 −100 125 125 −55 to +125 Unit V V mA V V mA mW °C °C 1: Emitter (Tr1) 2: Base (Tr1) 3: Collector (Tr2) 0 to 0.