Datasheet Summary
posite Transistors
XN04504 (XN4504)
Silicon NPN epitaxial planar type
For amplification of low-frequency output
4 2.90+0.20
- 0.05 1.9±0.1 (0.95) (0.95) 5 6
Unit: mm
0.16+0.10
- 0.06
1.50+0.25
- 0.05
0.30+0.10
- 0.05 0.50+0.10
- 0.05 10˚
- Basic Part Number
- 2SD1328 × 2
1.1+0.2
- 0.1
Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Total power dissipation Junction temperature Storage temperature
VCBO VCEO VEBO IC ICP PT Tj Tstg
25 20 12 0.5 1 300 150
- 55 to +150
V V V A A mW °C °C
1: Collector (Tr1) 2: Base (Tr2) 3: Emitter (Tr2) EIAJ : SC-74
0 to 0.1
Parameter
Symbol
Rating...