Overview: posite Transistors XN4509
Silicon NPN epitaxial planer transistor
Unit: mm For high-frequency amplification
0.65±0.15 6
0.95 2.8 –0.3 +0.2 +0.25 1.5 –0.05 0.65±0.15 1 0.3 –0.05 2.9 –0.05 q q Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 1.9±0.1 +0.2 5 2 0.95 4 3 q 2SC4561 × 2 elements 1.1–0.1 0.4±0.2 s Absolute Maximum Ratings
Parameter Collector to base voltage Rating Collector to emitter voltage of element Emitter to base voltage Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg (Ta=25˚C)
Ratings 50 50 5 50 200 150 –55 to +150 Unit V V V mA mW ˚C ˚C 1 : Collector (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2) 4 : Collector (Tr2) 5 : Base (Tr1) 6 : Emitter (Tr1) EIAJ : SC–74 Mini Type Package (6–pin) Marking Symbol: AO Internal Connection
6 5 4 Tr1 1 2 3 Tr2 s Electrical Characteristics
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector cutoff current Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C)
Symbol VCBO VCEO VEBO ICBO ICEO hFE VCE(sat) fT Cob Conditions IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCB = 10V, IE = 0 VCE = 10V, IB = 0 VCE = 10V, IC = 2mA IC = 10mA, IB = 1mA VCB = 10V, IE = –2mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 200 0.06 250 1.5 min 50 50 5 0.1 100 500 0.3 V MHz pF typ max Unit V V V µA µA 0 to 0.05 0.1 to 0.3 0.8 0.16–0.06 +0.2 s Basic Part Number of Element +0.1 1.45±0.
