XN04A88 - Silicon NPN(PNP) epitaxial planer transistor

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Features

+0.1 +0.1 1 Composite Transistors XN04A88 (Ta=25˚C) Symbol VCBO VCEO VEBO ICBO ICEO hFE VCE(sat) Cob fT Conditions IC = 10µA, IE = 0 IC = 2mA, IB = 0 IE = 10µA, IC = 0 VCB = 20V, IE = 0 VCE = 10V, IB = 0 VCE = 10V, IC = 2mA IC = 100mA, IB = 10mA VCB = 10V, IE = 0, f = 1MHz VCB = 10V, IE =.
2mA, f = 200MHz 160 0.1 3.5 80 MHz min 60 50 7 0.1 0.1 460 0.3 V typ max Unit V V V µA mA s Electrical Characteristics q Tr1 Parameter Collector to base voltage Collector to emitter voltage Emi.

Panasonic Semiconductor

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Datasheet Details

Part number	XN04A88
Manufacturer	Panasonic Semiconductor
File Size	51.08 KB
Description	Silicon NPN(PNP) epitaxial planer transistor
Datasheet	XN04A88 Datasheet
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Composite Transistors XN04A88 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For amplification of low frequency output 0.65±0.15 2.8 –0.3 +0.2 +0.25 1.5 –0.05 6 0.65±0.15 1 0.3 –0.05 0.5 –0.05 0.95 +0.2 q q Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 2.9 –0.05 1.9±0.1 5 2 0.95 4 3 0.4±0.

Published: Apr 16, 2005 |