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XN1871 - Silicon N-channel junction FET

Datasheet Summary

Features

  • 1 Composite Transistors PT.
  • Ta 500 8 Ta=25˚C 7 XN1871 ID.
  • VDS 9.6 VDS=10V 8.0 ID.
  • VGS Total power dissipation PT (mW) 400 Drain current ID (mA) VGS=0V 5 4.
  • 0.1V 3 2 1.
  • 0.2V.
  • 0.3V.
  • 0.4V Drain current ID (mA) 6 6.4 300 4.8 Ta=75˚C 3.2 25˚C 1.6.
  • 25˚C 200 100 0 0 40 80 120 160 0 0 2 4 6 8 10 12 0.
  • 1.0.
  • 0.8.
  • 0.6.
  • 0.4.
  • 0.2 0 Ambient temperature Ta (˚C) Drain to source vol.

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Datasheet Details

Part number XN1871
Manufacturer Panasonic Semiconductor
File Size 31.94 KB
Description Silicon N-channel junction FET
Datasheet download datasheet XN1871 Datasheet
Additional preview pages of the XN1871 datasheet.

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Full PDF Text Transcription

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Composite Transistors XN1871 Silicon N-channel junction FET Unit: mm For amplification of the low frequency 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.05 5 0.65±0.15 1 0.95 2.9 -0.05 q q Two elements incorporated into one package. (Soure-coupled FETs) Reduction of the mounting area and assembly cost by one half. 1.9±0.1 +0.2 4 0.95 3 2 0.3 -0.05 0.4±0.2 0.16 -0.06 +0.1 1.1 -0.1 q 2SK198 × 2 elements 0.8 s Basic Part Number of Element +0.
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