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XN1872 - Silicon N-channel . Enhancement MOS FET

Datasheet Summary

Features

  • 1 Composite Transistors PT.
  • Ta 500 120 Ta=25˚C XN1872 ID.
  • VDS 120 VDS=5V 100 VGS=6.0V 80 5.5V 5.0V 4.5V 40 ID.
  • VGS Total power dissipation PT (mW) 400 100 Drain current ID (mA) Drain current ID (mA) 80 Ta=.
  • 25˚C 25˚C 300 60 60 75˚C 200 4.0V 3.5V 3.0V 40 100 20 20 0 0 40 80 120 160 0 0 2 4 6 8 10 0 0 2 4 6 8 10 Ambient temperature Ta (˚C) Drain to source voltage VDS (V) Gate to source voltage VGS (V) | Yfs |.
  • VDS Forward trans.

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Datasheet Details

Part number XN1872
Manufacturer Panasonic Semiconductor
File Size 32.08 KB
Description Silicon N-channel . Enhancement MOS FET
Datasheet download datasheet XN1872 Datasheet
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Full PDF Text Transcription

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Composite Transistors XN1872 Silicon N-channel • Enhancement MOS FET Unit: mm For switching 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.05 5 0.65±0.15 1 0.95 2.9 -0.05 q q Two elements incorporated into one package. (Source-coupled FETs) Reduction of the mounting area and assembly cost by one half. 1.9±0.1 +0.2 4 0.95 3 2 0.3 -0.05 0.4±0.2 0.16 -0.06 +0.1 1.1 -0.1 q 2SK621 × 2 elements 0.8 s Basic Part Number of Element +0.2 s Absolute Maximum Ratings Parameter Drain to source voltage Rating Gate to source voltage of element Drain current Total power dissipation Overall Channel temperature Storage temperature Symbol VDSS VGSO ID IDM PT Tch Tstg (Ta=25˚C) Ratings 50 8 100 200 300 150 –55 to +150 Unit V V mA mA mW ˚C ˚C 1 : Drain (Tr1) 2 : Drain (Tr2) 3 : Gate (Tr2) 0 to 0.
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