XN4215 - Silicon NPN epitaxial planer transistor

Features

0.5.
0.05 +0.1 +0.1 1 Composite Transistors PT.
Ta 500 XN4215 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC.
VCE 160 100 VCE(sat).
IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 hFE.
IC 400 VCE=10V 30 10 3 1 0.3 0.1 0.03 0.01 0.1 25˚C Forward current transfer ratio hFE 140 IB=1.0mA 0.9mA 0.8mA Ta=25˚C 350 300 250 200 25˚C 150 100 50 0.
25˚C Ta=75˚C Colle.

Panasonic Semiconductor

Datasheet Details

Part number	XN4215
Manufacturer	Panasonic
File Size	32.85 KB
Description	Silicon NPN epitaxial planer transistor
Datasheet	XN4215 Datasheet
Additional preview pages of the XN4215 datasheet.

📁 Similar Datasheet

XN4410 - 2A PWM Buck Converter (Innuovo)

Other Datasheets by Panasonic Semiconductor

XN4210 - Silicon NPN epitaxial planer transistor
XN4211 - Silicon NPN epitaxial planer transistor
XN4212 - Silicon NPN epitaxial planer transistor
XN4213 - Silicon NPN epitaxial planer transistor
XN4214 - Silicon NPN epitaxial planer transistor
XN4216 - Silicon NPN epitaxial planer transistor
XN421F - Silicon NPN epitaxial planer transistor
XN421L - Silicon NPN epitaxial planer transistor

Full PDF Text Transcription

Click to expand full text

Composite Transistors XN4215 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 0.65±0.15 6 0.95 2.8 –0.3 +0.2 +0.25 1.5 –0.05 0.65±0.15 1 0.3 –0.05 2.9 –0.05 q q Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 1.9±0.1 +0.2 5 2 0.95 4 3 s Basic Part Number of Element q 1.1–0.1 0.4±0.

Published: Apr 16, 2005 |