XN421F - Silicon NPN epitaxial planer transistor

Features

+0.1 +0.1 1 Composite Transistors PT.
Ta 500 XN421F Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC.
VCE 240 100 VCE(sat).
IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 160 hFE.
IC VCE=10V 200 30 10 3 1 0.3 25˚C 0.1 0.03 0.01 0.1 Ta=75˚C Forward current transfer ratio hFE Collector current IC (mA) 160 0.9mA 0.8mA 0.7mA 0.6mA 120 Ta=75˚C 80 25˚C.
25˚C 120.

Panasonic Semiconductor

Datasheet Details

Part number	XN421F
Manufacturer	Panasonic
File Size	33.71 KB
Description	Silicon NPN epitaxial planer transistor
Datasheet	XN421F Datasheet
Additional preview pages of the XN421F datasheet.

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Full PDF Text Transcription

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Composite Transistors XN421F Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 0.65±0.15 2.8 –0.3 +0.2 +0.25 1.5 –0.05 6 0.65±0.15 1 0.3 –0.05 0.5 –0.05 0.95 2.9 –0.05 q q Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 1.9±0.1 +0.2 5 2 0.95 4 3 s Basic Part Number of Element q 1.1–0.1 0.4±0.

Published: Apr 16, 2005 |