XN421L - Silicon NPN epitaxial planer transistor

Features

0.5.
0.05 +0.1 +0.1 1 Composite Transistors PT.
Ta 500 XN421L Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC.
VCE 240 VCE(sat).
IC 100 hFE.
IC IC/IB=10 240 VCE=10V Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C 200 Forward current transfer ratio hFE 200 Collector current IC (mA) 10 160 IB=1.0mA 120 0.8mA 0.6mA 80 0.4mA 160 Ta=75˚C 1 120 25˚C Ta=75˚C 25˚C 0.1.

Panasonic Semiconductor

Datasheet Details

Part number	XN421L
Manufacturer	Panasonic
File Size	32.33 KB
Description	Silicon NPN epitaxial planer transistor
Datasheet	XN421L Datasheet
Additional preview pages of the XN421L datasheet.

📁 Similar Datasheet

XN4410 - 2A PWM Buck Converter (Innuovo)

Other Datasheets by Panasonic Semiconductor

XN4210 - Silicon NPN epitaxial planer transistor
XN4211 - Silicon NPN epitaxial planer transistor
XN4212 - Silicon NPN epitaxial planer transistor
XN4213 - Silicon NPN epitaxial planer transistor
XN4214 - Silicon NPN epitaxial planer transistor
XN4215 - Silicon NPN epitaxial planer transistor
XN4216 - Silicon NPN epitaxial planer transistor
XN421F - Silicon NPN epitaxial planer transistor

Full PDF Text Transcription

Click to expand full text

Composite Transistors XN421L Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 0.65±0.15 6 2.8 –0.3 +0.2 +0.25 1.5 –0.05 0.65±0.15 1 0.3 –0.05 0.95 2.9 –0.05 q q Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 1.9±0.1 +0.2 5 2 0.95 4 3 s Basic Part Number of Element q 1.1–0.1 0.4±0.

Published: Apr 16, 2005 |