XN4503 - Silicon NPN epitaxial planer transistor

Features

0.5.
0.05 +0.1 +0.1 1 Composite Transistors PT.
Ta 500 XN4503 IC.
VCE 1.2 18mA 16mA 14mA 12mA 10mA 8mA 6mA 0.6 4mA 0.4 2mA 0.2 100 VCE(sat).
IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 IB=20mA Total power dissipation PT (mW) Collector current IC (A) 400 1.0 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 0.8 300 200 Ta=75˚C 25˚C.
25˚C 100 0 0 40 80 120 160 0 0 0.4 0.8 1.2 1.6 2.0 0.1 0.3 1 3 10 Ambient temper.

Panasonic Semiconductor

Datasheet Details

Part number	XN4503
Manufacturer	Panasonic
File Size	33.14 KB
Description	Silicon NPN epitaxial planer transistor
Datasheet	XN4503 Datasheet
Additional preview pages of the XN4503 datasheet.

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Full PDF Text Transcription

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Composite Transistors XN4503 Silicon NPN epitaxial planer transistor Unit: mm For amplification of low frequency output 0.65±0.15 6 0.95 2.8 –0.3 +0.2 +0.25 1.5 –0.05 0.65±0.15 1 0.3 –0.05 2.9 –0.05 q q Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 1.9±0.1 +0.2 5 2 0.95 4 3 q 2SD813 × 2 elements 1.1–0.1 0.4±0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of Emitter to base voltage element Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg (Ta=25˚C) Ratings 25 20 7 0.

Published: Apr 16, 2005 |