XN6115 - Silicon PNP epitaxial planer transistor

Features

0.5.
0.05 +0.1 +0.1 1 Composite Transistors PT.
Ta 500 XN6115 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC.
VCE.
160.
100 VCE(sat).
IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 400 hFE.
IC VCE=.
10V Collector current IC (mA).
120.
100.
80.
60.
0.9mA.
0.8mA.
0.7mA.
0.6m.

Panasonic Semiconductor

Datasheet Details

Part number	XN6115
Manufacturer	Panasonic Semiconductor
File Size	33.40 KB
Description	Silicon PNP epitaxial planer transistor
Datasheet	XN6115 Datasheet
Additional preview pages of the XN6115 datasheet.

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Full PDF Text Transcription

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Composite Transistors XN6115 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 0.65±0.15 6 0.95 2.8 –0.3 +0.2 +0.25 1.5 –0.05 0.65±0.15 1 0.3 –0.05 2.9 –0.05 q q Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 1.9±0.1 +0.2 5 2 0.95 4 3 s Basic Part Number of Element q 1.1–0.1 0.4±0.

Published: Apr 16, 2005 |