XN611FH - Silicon PNP epitaxial planer transistor

Features

0.5.
0.05 +0.1 +0.1 1 Composite Transistors XN611FH (Ta=25˚C) Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL fT R1 R1/R2 Conditions IC =.
10µA, IE = 0 IC =.
2mA, IB = 0 VCB =.
50V, IE = 0 VCE =.
50V, IB = 0 VEB =.
6V, IC = 0 VCE =.
10V, IC =.
5mA IC =.
10mA, IB =.
0.3mA VCC =.
5V, VB =.
0.5V, RL = 1kΩ VCC =.
5V, VB =.
2.5V, RL = 1kΩ VCB =.
10V, IE = 1mA, f = 200MH.

Panasonic Semiconductor

Datasheet Details

Part number	XN611FH
Manufacturer	Panasonic Semiconductor
File Size	51.29 KB
Description	Silicon PNP epitaxial planer transistor
Datasheet	XN611FH Datasheet
Additional preview pages of the XN611FH datasheet.

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Full PDF Text Transcription

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Composite Transistors XN611FH Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 0.65±0.15 6 0.95 2.8 –0.3 +0.2 +0.25 1.5 –0.05 0.65±0.15 1 0.3 –0.05 2.9 –0.05 q q Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 1.9±0.1 +0.2 5 2 0.95 4 3 s Basic Part Number of Element q 1.1–0.1 UN111F+UN111H [Tr1] [Tr2] 0.4±0.

Published: Apr 16, 2005 |