XN611FH Datasheet | Panasonic

Key Features

• 5 -0.05 +0.1 +0.1 1 Composite Transistors XN611FH (Ta=25˚C) Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL fT R1 R1/R2 Conditions IC = -10µA, IE = 0 IC = -2mA, IB = 0 VCB = -50V, IE = 0 VCE = -50V, IB = 0 VEB = -6V, IC = 0 VCE = -10V, IC = -5mA IC = -10mA, IB = - 0.3mA VCC = -5V, VB = - 0.5V, RL = 1kΩ VCC = -5V, VB = -2.5V, RL = 1kΩ VCB = -10V, IE = 1mA, f = 200MHz -30% 80 4.7 0.47 +30% -4.9 - 0.2 30 - 0.25 V V V MHz kΩ min -50 -50 - 0.1 - 0.5 -1.0 typ max Unit V V µA µA mA s Electrical Characteristics q Tr1 Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Transition frequency Input resistance Resistance ratio q Tr2 Parameter Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL fT R1 R1/R2 Conditions IC = -10µA, IE = 0 IC = -2mA, IB = 0 VCB = -50V, IE = 0 VCE = -50V, IB = 0 VEB = -6V, IC = 0 VCE = -10V, IC = -5mA IC = -10mA, IB = - 0.3mA VCC = -5V, VB = - 0.5V, RL = 1kΩ VCC = -5V, VB = -2.5V, RL = 1kΩ VCB = -10V, IE = 1mA, f = 200MHz -30% 0.17 80 2.2 0.22 +30% 0.27 -4.9 - 0.2 30 - 0.25 V V V MHz kΩ min -50 -50 - 0.1 - 0.5 - 0.5 typ max Unit V V µA µA mA Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Transition frequency Input resistance Resistance ratio 2 Composite Transistors Common characteristics chart PT - Ta 500 XN611FH Total power dissipation PT (mW) 400 300 200 100