XN6212 - Silicon NPN epitaxial planer transistor

Features

0.5.
0.05 +0.1 +0.1 1 Composite Transistors PT.
Ta 500 XN6212 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC.
VCE 160 100 VCE(sat).
IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 400 hFE.
IC VCE=10V 30 10 3 1 0.3 0.1.
25˚C 0.03 0.01 0.1 Collector current IC (mA) 120 100 80 IB=1.0mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA Forward current transfer ratio.

Panasonic Semiconductor

Datasheet Details

Part number	XN6212
Manufacturer	Panasonic Semiconductor
File Size	33.96 KB
Description	Silicon NPN epitaxial planer transistor
Datasheet	XN6212 Datasheet
Additional preview pages of the XN6212 datasheet.

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Full PDF Text Transcription

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Composite Transistors XN6212 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 0.65±0.15 6 0.95 2.8 –0.3 +0.2 +0.25 1.5 –0.05 0.65±0.15 1 0.3 –0.05 2.9 –0.05 q q Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 1.9±0.1 +0.2 5 2 0.95 4 3 s Basic Part Number of Element q 1.1–0.1 0.4±0.

Published: Apr 16, 2005 |