XN6213 - Silicon NPN epitaxial planer transistor

Features

+0.1 +0.1 1 Composite Transistors PT.
Ta 500 XN6213 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC.
VCE 160 100 VCE(sat).
IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 400 Ta=25˚C hFE.
IC VCE=10V Collector current IC (mA) 120 100 80 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA 30 10 3 1 0.3 25˚C 0.1 0.03 0.01 0.1.
25˚C Ta=75˚C Forward current transfer ratio hFE 140.

Panasonic Semiconductor

Datasheet Details

Part number	XN6213
Manufacturer	Panasonic Semiconductor
File Size	33.81 KB
Description	Silicon NPN epitaxial planer transistor
Datasheet	XN6213 Datasheet
Additional preview pages of the XN6213 datasheet.

📁 Similar Datasheet

Other Datasheets by Panasonic Semiconductor

XN6211 - Silicon NPN epitaxial planer transistor
XN6212 - Silicon NPN epitaxial planer transistor
XN6214 - Silicon NPN epitaxial planer transistor
XN6215 - Silicon NPN epitaxial planer transistor
XN6216 - Silicon NPN epitaxial planer transistor
XN6111 - Silicon PNP epitaxial planer transistor
XN6112 - Silicon PNP epitaxial planer transistor
XN6113 - Silicon PNP epitaxial planer transistor

Full PDF Text Transcription

Click to expand full text

Composite Transistors XN6213 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 0.65±0.15 2.8 –0.3 +0.2 +0.25 1.5 –0.05 6 0.65±0.15 1 0.3 –0.05 0.5 –0.05 0.95 2.9 –0.05 q q Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 1.9±0.1 +0.2 5 2 0.95 4 3 s Basic Part Number of Element q 1.1–0.1 0.4±0.

Published: Apr 16, 2005 |