Datasheet4U Logo Datasheet4U.com

XN6534 - Silicon NPN epitaxial planer transistor

Features

  • 0.5.
  • 0.05 +0.1 +0.1 1 Composite Transistors PT.
  • Ta 500 XN6534 IC.
  • VCE 12 Ta=25˚C IB=100µA 12 VCE=6V Ta=25˚C 10 IC.
  • I B Total power dissipation PT (mW) Collector current IC (mA) 8 80µA 60µA Collector current IC (mA) 400 10 8 300 6 40µA 6 200 4 4 100 2 20µA 2 0 0 40 80 120 160 0 0 4 8 12 16 0 0 40 80 120 160 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base current IB (µA) IC.
  • VBE 30 100 VCE(sat).

📥 Download Datasheet

Datasheet preview – XN6534

Datasheet Details

Part number XN6534
Manufacturer Panasonic Semiconductor
File Size 33.70 KB
Description Silicon NPN epitaxial planer transistor
Datasheet download datasheet XN6534 Datasheet
Additional preview pages of the XN6534 datasheet.
Other Datasheets by Panasonic Semiconductor

Full PDF Text Transcription

Click to expand full text
Composite Transistors XN6534 Silicon NPN epitaxial planer transistor Unit: mm For high-frequency amplification 0.65±0.15 6 2.8 –0.3 +0.2 +0.25 1.5 –0.05 0.65±0.15 1 0.3 –0.05 0.95 2.9 –0.05 q q Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 1.9±0.1 +0.2 5 2 0.95 4 3 q 2SC2404 × 2 elements 1.1–0.1 0.4±0.
Published: |