XN6537 - Silicon NPN epitaxial planer transistor

Features

0.5.
0.05 +0.1 +0.1 1 Composite Transistors PT.
Ta 500 XN6537 IC.
VCE 30 Ta=25˚C 60 VCE=10V 50 25˚C IC.
VBE Total power dissipation PT (mW) Collector current IC (mA) Collector current IC (mA) 400 25 20 300 IB=300µA 250µA 200µA 40 Ta=75˚C.
25˚C 15 30 200 10 150µA 100µA 50µA 20 100 5 10 0 0 40 80 120 160 0 0 2 4 6 8 10 12 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitt.

Panasonic Semiconductor

Datasheet Details

Part number	XN6537
Manufacturer	Panasonic Semiconductor
File Size	42.14 KB
Description	Silicon NPN epitaxial planer transistor
Datasheet	XN6537 Datasheet
Additional preview pages of the XN6537 datasheet.

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Full PDF Text Transcription

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Composite Transistors XN6537 Silicon NPN epitaxial planer transistor Unit: mm For wide-band low-noise amplification 0.65±0.15 6 2.8 –0.3 +0.2 +0.25 1.5 –0.05 0.65±0.15 1 0.3 –0.05 0.95 2.9 –0.05 q q Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 1.9±0.1 +0.2 5 2 0.95 4 3 q 2SC3110 × 2 elements 1.1–0.1 0.4±0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Rating Emitter to base voltage of element Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg (Ta=25˚C) Ratings 15 12 2.

Published: Apr 16, 2005 |