XP0111M
XP0111M is Silicon PNP Transistor manufactured by Panasonic.
Features q q
Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
2.0±0.1
1 2 3
0.9± 0.1 q
UN211M × 2 elements
0.7±0.1 s Basic Part Number of Element
0.2 s Absolute Maximum Ratings
Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg
(Ta=25˚C)
Ratings
- 50
- 50
- 100 150 150
- 55 to +150 Unit V V m A m W ˚C
1 : Base (Tr1) 2 : Emitter 3 : Base (Tr2)
Marking Symbol: EK Internal Connection
1 Tr1 5
˚C
2 3
0 to 0.1
0.2±0.1
4 : Collector (Tr2) 5 : Collector (Tr1) EIAJ : SC- 88A S- Mini Type Package (5- pin)
Tr2
4 s Electrical Characteristics
Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Forward current transfer h FE ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Input resistance Resistance ratio Transition frequency
- 1
(Ta=25˚C)
Symbol VCBO VCEO ICBO ICEO IEBO h FE h FE (small/large)- 1 VCE(sat) VOH VOL R1 R1/R2 f T VCB =
- 10V, IE = 1m A, f = 200MHz Conditions IC =
- 10µA, IE = 0 IC =
- 2m A, IB = 0 VCB =
- 50V, IE = 0 VCE =
- 50V, IB = 0 VEB =
- 6V, IC = 0 VCE =
- 10V, IC =
- 5m A VCE...
