XP05531
XP05531 is Silicon NPN epitaxial planer transistor manufactured by Panasonic.
Features
1 2 3
6 5 4
0.9±0.1
0 to 0.1 s Basic Part Number of Element q
0.7±0.1
0.2±0.1
2SC3130 × 2 elements
1 : Emitter (Tr1) 2 : Base (Tr1) 3 : Base (Tr2) s Absolute Maximum Ratings
Parameter Collector to base voltage Rating Collector to emitter voltage of Emitter to base voltage element Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg
(Ta=25˚C)
Ratings 15 10 3 50 150 150
- 55 to +150 Unit V V V m A m W ˚C ˚C
4 : Collector (Tr2) 5 : Emitter (Tr2) 6 : Collector (Tr1) EIAJ : SC- 88 S- Mini Type Package (6- pin)
Marking Symbol: 5M Internal Connection
1 2 3 Tr1 6 5 4
Tr2 s Electrical Characteristics
Parameter Collector to emitter voltage Emitter to base voltage Collector cutoff current Forward current transfer ratio h FE2/h FE1 ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance mon base reverse transfer capacitance Collector to base parameter
(Ta=25˚C)
Symbol VCEO VEBO ICBO ICEO h FE1 h FE2/h FE1 VCE(sat) f T Cob Crb rbb.CC Conditions IC = 2m A, IB = 0 IE = 10µA, IC = 0 VCB = 10V, IE = 0 VCE = 10V, IB = 0 VCE = 4V, IC = 5m A VCE = 4V, IC = 100µA VCE = 4V, IC = 5m A IC = 20m A, IB = 4m A VCB = 4V, IE =
- 5m A, f = 200MHz VCB = 4V, IE = 0, f = 1MHz VCB = 4V, IE = 0, f = 1MHz VCB = 4V, IE =
- 5m A, f = 31.9MHz 1.4 1.9 0.9 0.25 11.8 75 0.75 min 10 3 1 10 400 1.6 0.5 2.5 1.1 0.35 13.5 V GHz p F p F ps typ max Unit V V µA µA
- 0.02
+0.05
1 posite Transistors
- Ta
80 Ta=25˚C 50 25˚C Ta=75˚C 40
- VCE
60 VCE=4V
- VBE
Total power dissipation PT (m W)
Collector current IC (m A)
140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140...
