Overview: posite Transistors XP01504 (XP1504)
Silicon NPN epitaxial planer transistor
Unit: mm For amplification of low frequency output (0.425) 0.20±0.05 5 4 0.12+0.05 –0.02 1.25±0.10 2.1±0.1 G G Two elements incorporated into one package. (Emitter-coupled transistors) Reduction of the mounting area and assembly cost by one half.
10° 1 2 3 (0.65) (0.65) 1.3±0.1 2.0±0.1 0.9±0.1 G 2SD1915F × 2 elements I Absolute Maximum Ratings
Parameter Collector to base voltage Rating Collector to emitter voltage of Emitter to base voltage element Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg (Ta=25˚C)
Ratings 50 20 25 300 500 150 150 –55 to +150 Unit V V V mA mA mW ˚C ˚C 1 : Base (Tr1) 2 : Emitter 3 : Base (Tr2) 4 : Collector (Tr2) 5 : Collector (Tr1) EIAJ : SC–88A SMini5-G1 Package Marking Symbol: 5S Internal Connection
1 2 3 4 Tr1 5 Tr2 I Electrical Characteristics
Parameter Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency Collector output capacitance ON Resistance
*1 (Ta=25˚C)
Symbol VCEO ICBO IEBO hFE VCE(sat) VBE fT Cob Ron*1
1kΩ IB=1mA f=1kHz V=0.3V Conditions IC = 1mA, IB = 0 VCB = 50V, IE = 0 VEB = 25V, IC = 0 VCE = 2V, IC = 4mA IC = 30mA, IB = 3mA VCE = 2V, IC = 4mA VCB = 6V, IE = –4mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz min 20 typ 0 to 0.1 0.9+0.2 –0.1 I Basic Part Number of Element 5° max 0.2±0.
