q q
Two elements incorporated into one package. (Emitter-coupled transistors) Reduction of the mounting area and assembly cost by one half. 2.0±0.1
1 2 3
5
0.65
4
0.9± 0.1
q
2SD601A × 2 elements
0.7±0.1
s Basic Part Number of Element
0.2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Rating Emitter to base voltage of element Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature S.
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Composite Transistors
XP1501
Silicon NPN epitaxial planer transistor
Unit: mm
2.1±0.1 0.425 1.25±0.1 0.425
0.2±0.05 0.12 – 0.02
+0.05
For general amplification
0.65
s Features
q q
Two elements incorporated into one package. (Emitter-coupled transistors) Reduction of the mounting area and assembly cost by one half.
2.0±0.1
1 2 3
5
0.65
4
0.9± 0.1
q
2SD601A × 2 elements
0.7±0.1
s Basic Part Number of Element
0.