q q q
0.9± 0.1
s Basic Part Number of Element
q
s Absolute Maximum Ratings
Parameter Collector to base voltage Rating Emitter to base voltage of element Collector current Collector to emitter voltage Symbol VCBO VCES VEBO IC ICP PT Tj Tstg
(Ta=25˚C)
Ratings 40 40 5 100 300 150 150.
55 to +150 Unit V V V mA mA mW ˚C ˚C
1 : Base (Tr1) 2 : Emitter 3 : Base (Tr2)
Marking Symbol: EU Internal Connection
1 2 3 4 Tr1 5
Peak collector current Total power dissipation Overall Junction temper.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Composite Transistors
XP1554
Silicon NPN epitaxial planer transistor
Unit: mm
2.1±0.1 0.425 1.25±0.1 0.425
0.2±0.05 0.12 – 0.02
+0.05
For high speed switching
0.65
s Features
q q q
0.9± 0.1
s Basic Part Number of Element
q
s Absolute Maximum Ratings
Parameter Collector to base voltage Rating Emitter to base voltage of element Collector current Collector to emitter voltage Symbol VCBO VCES VEBO IC ICP PT Tj Tstg
(Ta=25˚C)
Ratings 40 40 5 100 300 150 150 –55 to +150 Unit V V V mA mA mW ˚C ˚C
1 : Base (Tr1) 2 : Emitter 3 : Base (Tr2)
Marking Symbol: EU Internal Connection
1 2 3 4 Tr1 5
Peak collector current Total power dissipation Overall Junction temperature Storage temperature
0 to 0.1
2SC3757 × 2 elements
0.7±0.1
0.2
Two elements incorporated into one package.
XP1554 Datasheet
