0.65 2.0±0.1
q
q
Two elements incorporated into one package. (Emitter-coupled transistors) Reduction of the mounting area and assembly cost by one half. 1 2 3
5
0.65
4
0.9± 0.1
q
2SB709A+2SD601A
0.7±0.1
s Basic Part Number of Element
0.2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Tr1 Emitter to base voltage Collector current Peak collector current Collector to base voltage Collector to emitter voltage Tr2 Emitter to base voltage Coll.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Composite Transistors
XP1601
Silicon PNP epitaxial planer transistor (Tr1) Silicon NPN epitaxial planer transistor (Tr2)
Unit: mm
2.1±0.1 0.425 1.25±0.1 0.425
0.2±0.05 0.12 – 0.02
+0.05
For general amplification
s Features
0.65 2.0±0.1
q
q
Two elements incorporated into one package. (Emitter-coupled transistors) Reduction of the mounting area and assembly cost by one half.
1 2 3
5
0.65
4
0.9± 0.1
q
2SB709A+2SD601A
0.7±0.1
s Basic Part Number of Element
0.